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Basics

Details

GT52N10T

Goford Semiconductor

N-Channel 100 V 80A 227W Through Hole TO-220

  • PDF:
  • Package: TO-220-3 Full Pack
  • ROHS:
  • Status: Active
  • 3D Model:
  • Series: -
  • Mfr: Goford Semiconductor
  • Series: -
  • Package: Tube
  • FET Type: N-Channel
  • Vgs (Max): ±20V
  • Technology: MOSFET (Metal Oxide)
  • Mounting Type: Through Hole
  • Package / Case: TO-220-3 Full Pack
  • Product Status: Active
  • Vgs(th) (Max) @ Id: 2.5V @ 250µA
  • Operating Temperature: -55°C~150°C(TJ)
  • Rds On (Max) @ Id, Vgs: 9mOhm @ 50A, 10V
  • Power Dissipation (Max): 227W
  • Supplier Device Package: TO-220
  • Gate Charge (Qg) (Max) @ Vgs: 44.5 nC @ 10 V
  • Drain to Source Voltage (Vdss): 100 V
  • Input Capacitance (Ciss) (Max) @ Vds: 2626 pF @ 50 V
  • Current - Continuous Drain (Id) @ 25°C: 80A

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