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Basics

Details

GPI65060DFN

GaNPower

N-Channel 650 V 60A Surface Mount Die

  • PDF:
  • Package: Die
  • ROHS:
  • Status: Active
  • 3D Model:
  • Series: -
  • Mfr: GaNPower
  • Series: -
  • Package: Tape & Reel (TR)
  • FET Type: N-Channel
  • Vgs (Max): +7.5V, -12V
  • Technology: GaNFET (Gallium Nitride)
  • FET Feature: -
  • Mounting Type: Surface Mount
  • Package / Case: Die
  • Product Status: Active
  • Vgs(th) (Max) @ Id: 1.2V @ 3.5mA
  • Operating Temperature: -55°C~150°C(TJ)
  • Power Dissipation (Max): -
  • Supplier Device Package: Die
  • Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 6 V
  • Drain to Source Voltage (Vdss): 650 V
  • Input Capacitance (Ciss) (Max) @ Vds: 420 pF @ 400 V
  • Drive Voltage (Max Rds On, Min Rds On): 6V
  • Current - Continuous Drain (Id) @ 25°C: 60A

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