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Details

GE12160CEA3

GE Aerospace

Mosfet Array 2 N-Channel (Half Bridge) 1200V (1.2kV) 1.425kA (Tc) 3.75kW (Tc) Chassis Mount

  • PDF:
  • Package: Module
  • ROHS:
  • Status: Active
  • 3D Model:
  • Series: SiC Power
  • Mfr: GE Aerospace
  • Series: SiC Power
  • Package: Bulk
  • FET Type: 2 N-Channel (Half Bridge)
  • FET Feature: Silicon Carbide (SiC)
  • Power - Max: 3.75kW (Tc)
  • Mounting Type: Chassis Mount
  • Package / Case: Module
  • Product Status: Active
  • Vgs(th) (Max) @ Id: 4.5V @ 480mA
  • Operating Temperature: -55°C~150°C(Tc)
  • Rds On (Max) @ Id, Vgs: 1.5mOhm @ 475A, 20V
  • Supplier Device Package: -
  • Gate Charge (Qg) (Max) @ Vgs: 3744nC @ 18V
  • Drain to Source Voltage (Vdss): 1200V (1.2kV)
  • Input Capacitance (Ciss) (Max) @ Vds: 90000pF @ 600V
  • Current - Continuous Drain (Id) @ 25°C: 1.425kA (Tc)

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