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Details

GD60MPS06H

GeneSiC Semiconductor

Diode Silicon Carbide Schottky 650 V 82A Through Hole TO-247-2

  • PDF:
  • Package: TO-247-2
  • ROHS:
  • Status: Active
  • 3D Model:
  • Series: SiC Schottky MPS™
  • Mfr: GeneSiC Semiconductor
  • Speed: No Recovery Time > 500mA (Io)
  • Series: SiC Schottky MPS™
  • Package: Tube
  • Diode Type: Silicon Carbide Schottky
  • Mounting Type: Through Hole
  • Package / Case: TO-247-2
  • Product Status: Active
  • Base Product Number: GD60
  • Capacitance @ Vr, F: 1.463nF @ 1V, 1MHz
  • Supplier Device Package: TO-247-2
  • Reverse Recovery Time (trr): 0 ns
  • Current - Reverse Leakage @ Vr: 10 µA @ 650 V
  • Voltage - DC Reverse (Vr) (Max): 650 V
  • Current - Average Rectified (Io): 82A
  • Operating Temperature - Junction: -55°C~175°C
  • Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 60 A

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