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G3R12MT12K

GeneSiC Semiconductor

N-Channel 1200 V 157A (Tc) 567W (Tc) Through Hole TO-247-4

  • PDF:
  • Package: TO-247-4
  • ROHS:
  • Status: Active
  • 3D Model:
  • Series: -
  • Mfr: GeneSiC Semiconductor
  • Series: -
  • Package: Tube
  • FET Type: N-Channel
  • Vgs (Max): +22V, -10V
  • Technology: SiC (Silicon Carbide Junction Transistor)
  • FET Feature: -
  • Mounting Type: Through Hole
  • Package / Case: TO-247-4
  • Product Status: Active
  • Vgs(th) (Max) @ Id: 2.7V @ 50mA
  • Base Product Number: G3R12M
  • Operating Temperature: -55°C~175°C(TJ)
  • Rds On (Max) @ Id, Vgs: 13mOhm @ 100A, 18V
  • Power Dissipation (Max): 567W (Tc)
  • Supplier Device Package: TO-247-4
  • Gate Charge (Qg) (Max) @ Vgs: 288 nC @ 15 V
  • Drain to Source Voltage (Vdss): 1200 V
  • Input Capacitance (Ciss) (Max) @ Vds: 9335 pF @ 800 V
  • Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
  • Current - Continuous Drain (Id) @ 25°C: 157A (Tc)

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