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Details

AS1M040120T

ANBON SEMICONDUCTOR (INT'L) LIMITED

N-Channel 1200 V 60A (Tc) 330W (Tc) Through Hole TO-247-4

  • PDF:
  • Package: TO-247-4
  • ROHS:
  • Status: Active
  • 3D Model:
  • Series: -
  • Mfr: ANBON SEMICONDUCTOR (INT'L) LIMITED
  • Series: -
  • Package: Tube
  • FET Type: N-Channel
  • Vgs (Max): +25V, -10V
  • Technology: SiC (Silicon Carbide Junction Transistor)
  • FET Feature: -
  • Mounting Type: Through Hole
  • Package / Case: TO-247-4
  • Product Status: Active
  • Vgs(th) (Max) @ Id: 4V @ 10mA
  • Operating Temperature: -55°C~150°C(TJ)
  • Rds On (Max) @ Id, Vgs: 55mOhm @ 40A, 20V
  • Power Dissipation (Max): 330W (Tc)
  • Supplier Device Package: TO-247-4
  • Gate Charge (Qg) (Max) @ Vgs: 142 nC @ 20 V
  • Drain to Source Voltage (Vdss): 1200 V
  • Input Capacitance (Ciss) (Max) @ Vds: 2946 pF @ 1000 V
  • Drive Voltage (Max Rds On, Min Rds On): 20V
  • Current - Continuous Drain (Id) @ 25°C: 60A (Tc)

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